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dc.contributor.authorShymanska, A
dc.date.accessioned2011-11-06T22:54:31Z
dc.date.accessioned2011-11-06T22:56:26Z
dc.date.accessioned2012-04-07T05:50:25Z
dc.date.available2011-11-06T22:54:31Z
dc.date.available2011-11-06T22:56:26Z
dc.date.available2012-04-07T05:50:25Z
dc.date.copyright2010
dc.date.issued2011-11-07
dc.identifier.citationJounal of Computational Electronics, vol.9(2), pp.93 - 102
dc.identifier.issn1569-8025
dc.identifier.urihttp://hdl.handle.net/10292/3622
dc.description.abstractA computational method for simulation of stochastic processes of an electron multiplication in microchannel electron amplifiers is developed. The method is based on 3D Monte Carlo (MC) simulations and theorems about serial and parallel amplifcation stages proposed here. Splitting a stochastic process into a number of di®erent stages, enables a contribution of each stage to the entire process to be easily investigated. The method preserves all advantages of the MC simulations which are used only once for one simple stage. The use of the theorems allows to conduct any further investigations and optimizations without additional MC simulations. The method provides a high calculation accuracy with minimal cost of computations. The model is relevant to unsaturated operation of the amplifier with ex- ponential output distribution. The mean gain and the variance of the amplitude distribution at the output of the amplifier are predicted. In this paper the method is used to show how the input ratio of the signal to the noise is transforming to the output one, and how differ- ent multiplication stages contribute to the noise factor of the system. Finally, the effect of variations in channel diameters on noise characteristics of microchannel electron amplifiers is investigated.
dc.languageEnglish
dc.publisherSpringer
dc.relation.replaceshttp://hdl.handle.net/10292/2472
dc.relation.replaces10292/2472
dc.relation.replaceshttp://hdl.handle.net/10292/2473
dc.relation.replaces10292/2473
dc.relation.isreplacedby10292/3623
dc.relation.isreplacedbyhttp://hdl.handle.net/10292/3623
dc.relation.urihttp://www.springerlink.com/connect/9738343hu38gt311
dc.rightsAn author may self-archive an author-created version of his/her article on his/her own website and or in his/her institutional repository. He/she may also deposit this version on his/her funder’s or funder’s designated repository at the funder’s request or as a result of a legal obligation, provided it is not made publicly available until 12 months after official publication. He/ she may not use the publisher's PDF version, which is posted on www.springerlink.com, for the purpose of self-archiving or deposit. Furthermore, the author may only post his/her version provided acknowledgement is given to the original source of publication and a link is inserted to the published article on Springer's website. The link must be accompanied by the following text: "The final publication is available at www.springerlink.com”. (Please also see Publisher’s Version and Citation)
dc.subjectStochastic process
dc.subjectElectron multiplication
dc.subjectMonte Carlo simulations
dc.subjectMicrochannel electron amplifier
dc.subjectNoise factor.
dc.titleComputational Modeling of Stochastic Processes in Electron Amplifiers
dc.typeJournal Article
dc.rights.accessrightsOpenAccess
dc.identifier.doi10.1007/s10825-010-0309-8
dc.identifier.roid16035en_NZ


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